Two days, 5 themes, over 30 inspiring presentations

Presentation at Power Electronics International 2023 are grouped into 5 key themes which collectively provide complete coverage of the global power electronics industry.

If you are interested in speaking at Power Electronics International 2023, please contact info@pe-international.net or call +44 (0)24 7671 8970.

2023 Speakers Include

Boschman Advanced Packaging Technology
Compound Semiconductor Centre
Innoscience Europe BV
Marelli Electric Powertrain
PPM Power
ROHM Semiconductor
SGL Carbon
Wise Integration
Yole Group

2023 Presentation Abstracts

Electric vehicles: Driving the SiC revolution
Panel Session

Does a limited supply of SiC substrates threaten to thwart a massive expansion in this industry?

Awaiting panel session abstract.

Are you prepared for the shifting paradigm of SiC supply chain for BEV?

Presented by Yu Yang, Senior Technology & Market Analyst, Yole Group

SiC is surely the focus of vehicle electrification, both for light duty and for heavy duty vehicles. There will be solid growth in the main traction inverters in the next decade. This potential is huge enough to bring changes to the paradigm of the supply chain, which is greatly enhanced by the chip shortage in the past two years. Normally automotive OEMs stay at one end of the cascading supply chain of automotive electronics. Semiconductor device suppliers, including power modules, on one side, cooperate dominantly with Tier 2 (system) suppliers; on the other side, are in direct contact with upstream material suppliers. However, with SiC, where the material itself is critical, there is increasing vertical integration seen on various parts of the supply chain. Traditional power device manufacturers are extending the IDM business to the material side. What is worth of more attention is the increasing trend of OEMs getting down to the supply chain, with various strategies. With detailed analysis on the pros and cons of typical OEMs’ practices, suggestions are proposed to the power device IDMs, module manufacturers, fabless, foundries, substrate suppliers to embrace the new paradigm likely lasting for the next decades.

High Quality SiC substrates- A need of the hour for EV revolution.

Presented by Helge Willers, Sales Director, PureOn

Silicon carbide (SIC) substrates are the essential starting point for chips and devices that fuel the EV revolution. Unfortunately, this part of the puzzle is still an enigma in terms of the growth of crystals, processing of the crystals into wafers and efficiently converting these substrates into devices. The current market is starved for high quality wafers, and this is where the next expansion for many firms will be a focus area. Silicon carbide is a difficult material to grow and is extremely hard to cut and wafer. Technological advances in wafering are currently adopted to increase the throughput of wafers. The eco-system comprising of the Equipment makers, consumable suppliers, quality inspection are currently undergoing a technological advancement that will enable the target of 1 million 6 inch SiC wafers by 2025. We look into specific innovations of the wafering process here to understand the SiC roadmaps.

How to sustain the EV-Traction SiC Revolution: technology, manufacturing, supply chain and cost

Presented by Pietro Scalia, Senior Director Automotive Traction Solutions, Onsemi

The automotive market Electrification revolution happening today is hungry of both power and efficiency to enable extra miles at lower cost. The strongly reduced switching losses of SiC provide a dramatic enabler of the 800V Bus implementation, and increasing maturity of the wide bandwidth technology has been boosting adoption of SiC components by EV market disruptor and incumbent OEMs and Tier#1, in their inverters for power traction. Access to high-Quality SiC substrates and general supply chain security is key to secure long duration programs. Scaling manufacturing with larger-diameter single-crystal wafers, improving defectivity and yield choosing the best die size in line with modules to be implemented, are all possible approach to optimize cost of material while increasing performance, and still feed the huge growth of market demand for these power devices.

Next-Generation SiC coated graphite components for SiC epitaxy

Presented by Christian Militzer, CVD coating technology research expert, SGL Carbon

The SiC and GaN power electronics revolution is driving SGL Carbon’s R&D on novel and improved materials in support of multiple processes along the semiconductor value chain. One of SGLs focus areas is SiC and GaN epitaxy, in which SiC-coated graphite parts are used as susceptor and reactor components. The high temperatures and chemically aggressive gases in SiC and GaN epitaxy limit the lifetime of state-of-the-art SiC coating. To improve the resistance against chemical etching and mechanical degradation, SGL has developed next-generation SiC coating with drastically reduced pinhole etching and coating chipping, enabling enhanced performance and a prolonged component lifetime.

Presentation by Navitas

Presented by Sumit Jadav, Staff Applications Engineer, Navitas

Awaiting presentation abstract.

Presentation by Soitec

Presented by Emmanuel Sabonnadière, VP Division Automotive & Industrial, Soitec

Awaiting presentation abstract.

SiC Intelligent Power Modules, a system approach that lowers the barrier to entry of SiC in niche E-Mobility Applications

Presented by Pierre Delatte, CTO, CISSOID

Besides the mainstream EV market, E-Mobility encompasses a number of niche and emerging applications led by agile mid-size or start-up companies. This includes fully electric super cars, new autonomous vehicle concepts, E-Trucks or E-buses, specialty and industrial vehicles. Electrification is also entering other transportation markets like electric and hybrid VTOL or electric boats for examples. For these new applications, engineers need to solve e-powertrain hardware and software design challenges quickly and generally with limited engineering resources. Cissoid’s SiC inverter platform alleviates these challenges by bringing together the key elements needed in a drive system: This “grey-box” hardware/software platform comprises a SiC intelligent power module (IPM), a real-time controller board and customisable e-motor control software, a liquid cooler reference design, and a specially designed high-density DC-link capacitor.

SiC: the driving force of e-mobility and a sustainable future

Presented by Aly Mashaly, Director - Automotive Application & Power Systems, ROHM Semiconductor

Electromobility is transforming our Automotive industry, and soon enough, the quest for a greener future will influence all power electronics designs. Due to the physical-electrical properties’ limitations of silicon material, it will no longer meet the higher power density requirements while keeping satisfactory power conversion efficiency needed for a higher energy standard. Recognizing the challenges our industry is facing, we will elaborate on the benefits of WBG technology such as SiC and our efforts in supporting the demand from the mass market.

Silicon carbide offers high hopes for EVs, but can they meet stringent automotive quality levels?

Presented by Filippo Di Giovanni, Strategic Marketing, Innovation and Key Programs Manager – Power Transistor Macro Division, STMicroelectronics

The key to making electric vehicles (EVs) attractive to potential buyers is increasing range and reducing charging times. SiC MOSFETs enable unrivaled efficiency, better thermal performance, and higher power density in critical EV traction inverters as well as on-board chargers and DC-DC converters, not to mention charging infrastructure. Despite their recent commercialization, SiC products are already available in automotive-grade versions thanks to concerted efforts to raise quality levels to meet rigorous automotive market requirements. The latest STPOWER GEN3 SiC MOSFETs have achieved quality levels that are now close to conventional silicon, even while no real comparison can be made with SiC in terms of performance and efficiency.

GaN: Carving out niches in consumer electronics
Panel Session

What's it going to take to populate our homes with products powered by GaN?

Awaiting panel session abstract.

GaN Integrated Circuits are Revolutionizing Power Electronics

Presented by Marco Palma, Director of motor drives systems and applications, EPC

The latest ePower™ integrated circuits based on gallium nitride technology by Efficient Power Conversion (EPC) are revolutionizing Power Electronics applications such as dc-dc converters and motor drives as industrial drones, e-bikes, scooters, power tools. Gallium nitride technology has opened a new era in the world of power electronics because of a clear differentiation factor between GaN and silicon: medium voltage gallium nitride devices can be built on a planar technology while this is cost-prohibitive for silicon devices. Silicon devices are made on a vertical technology, making it physically impossible to have two power devices in the same chip. EPC’s GaN-on-Si planar technology allows the integration of the power section with the control in the same die. In 2014, EPC started the journey toward a power system-on-a-chip introducing a family of integrated devices comprised of multiple FETs on one chip. Practical examples of real applications with these integrated circuits will be shown at the PE International Conference.

GaN Power ICs Enable Superior System Cost and Reliability in Consumer and Industrial Markets

Presented by Alfred Hesener, Senior Director Industrial and Consumer Applications, Navitas

Navitas’ latest generation of GaNFast™ single and half-bridge power ICs with GaNSense™ technology integrates power, drive, control, sensing, protection, and level-shift isolation, to deliver the simplest, smallest, and most reliable solution. GaNFast power ICs reduce system cost and total cost of ownership (TCO) in consumer and industrial markets such as white goods, power supplies and lighting applications. In many of these applications, heatsinks can be eliminated or significantly reduced in size due to the efficiency improvements enabled by GaN power ICs. The GaNSense technology integrates loss-less current sensing in combination with autonomous temperature and current protection, offering superior, fast, and reliable protection in abnormal operating conditions, to create extremely robust and high performance applications.

GaN is now in the spotlight, providing the key ingredient fast-charging smartphones. How big could this market be, and what might come afterwards?

Awaiting presentation abstract.

Growth opportunities for Power GaN beyond the Consumer market

Presented by Taha Ayari, Technology and market analyst, Yole Group

Power GaN business took off in the consumer market starting from 2018-2019, when it has been significantly adopted in smartphone “in-box” and accessory fast chargers. Since then, the technology has been widely chosen as a solution replacing traditional silicon to make more efficient and more compact power supplies. This led to device market growth of about 138% between 2021 and 2022, with most of players more than doubling their revenues. Besides continuing penetration in the consumer power supply market, Yole sees more expansion opportunities coming for Power GaN which will be the focus of this presentation.

How does the digital control unlock the full capabilities of GaN in power supply

Presented by Thierry Bouchet, CEO, Wise Integration

Wideband gap devices (SiC and GaN) are key drivers to improve power supply efficiency and compactness, but limited performance is achieved due to more design difficulties in fine tuning and controlling the power supply using standard analog drivers. Digital control is the key solution to satisfy all these needs. With increasingly powerful microcontrollers available on the market, it is now possible to digitalize the power supply. In the presentation we will show how the combination of Wise Integration's WiseGan® power IC and WiseWare® digital control, simplifies the power supply architecture by reducing and eliminating external components and heat sinks. It will be demonstrated that extending WiseGan® power electronic devices with WiseWare® digital control is an optimal and compelling way to achieve the most efficient power supplies while improving system size, weight, cost and reliability.

Next Generation Device Architectures for Gallium Nitride and their Applications in Power and RF

Presented by Rob Harper, Programme Manager Power and RF Technologies, Compound Semiconductor Centre

Gallium Nitride is no longer a material of the future but is now very much of the present, today we see it successfully displacing silicon and other compound semiconductors across a wide range of power and wireless applications. Advances in GaN substrate manufacturing and the complex heteroepitaxial processes used to grow High Electron Mobility Transistor (HEMT) structures means that the number of automotive qualified GaN devices is increasing daily. Research effort into vertical GaN devices is also accelerating with the promise of significant breakdown and current density improvements that will enable GaN power devices to compete with SiC. I also intend to discuss new opportunities for GaN RF Power devices in 5G and rad-hard, ultra high sensitivity sensing.

The future ecosystem for GaN electronics, from a patent perspective

Presented by Rémi Comyn, Technology & Patent Analyst, KnowMade

Huge market opportunities are in sight for power and RF GaN devices in consumer, datacom/telecom, and automotive applications. How is the whole industry preparing to address these emerging markets? Patents offer a unique perspective on the strategies of players to overcome technical challenges, but also supply chain and cost issues. What's more, in a context where foreign dependencies are considered as more and more critical, the patenting activity highlights the emergence of domestic supply chains in various countries. Eventually, patent analysis provides another way to anticipate the competition in the emerging ecosystem for GaN electronics in the next few years.

Topologies to Address Improvements in Consumer and Personal Electronics Power Supplies Using GaN-on-Silicon Power Devices

Presented by Tushar Dhayagude, Vice President, Worldwide Sales, Transphorm

Personal battery-powered devices—from phones and laptops to power tools and electric bikes—using AC plugs for charging are expected to be small, sleek, and power efficient. GaN-on-Silicon power conversion technology can improve power storage size, charge times, and overall use without cumbersome power bricks by increasing efficiency, power density, supply reliability, and designability. This presentation will provide an overview of various end equipment requirements and topologies needed to achieve the GaN-enabled improvements. Specifically, the presentation will address AC-to-DC adapters for mobile phones, notebooks, LED lighting, in-wall chargers, and 2-wheeler chargers across power levels from 30 W to 750 W. System level considerations to achieve unprecedented GaN advantages will also be discussed along with technical comparisons of GaN FETs versus Silicon and Silicon Carbide MOSFETs.

What is needed to bring GaN power device into high-volume end-products such as mobile phone?

Presented by Denis Marcon, General Manager, Innoscience Europe BV

One market that was difficult to penetrate for GaN power devices was the mobile phone market. We believe this was due to the restricted supply of cost-competitive GaN device and to the availability of a suitable GaN power device designed to provide clear benefit inside the mobile phone. In this presentation, we will show how Innoscience has addressed both of these issues. We will show that a truly integrated device manufacturer with high volume 8-inch internal manufacturing fully focused on GaN, is required to bring GaN power devices into mainstream high-volume end-products, including mobile phones. Second, we will introduce Innoscience’s bi-directional GaN power device (BiGaN) that is the first GaN device that can conduct current and block voltage in both directions. One (1) BiGaN replaces two (2) Si MOSFETs in the Over Voltage Protection (OVP) unit inside mobile phones thus reducing the system size by at least 50%, increase the overall efficiency and reduce the temperature rise by 40%.

imec unlocking the full potential of GaN power electronics

Presented by Maritza Tangarife Ortiz, imec

Most current GaN-based power systems are multi-chip solutions: different components are assembled on a PCB. Not ideal, because maximum switching speeds don’t even come close to their potential values.  The better solution is to combine these components on one complex GaN-IC. So how do you tackle that monolithic integration? The biggest challenge is the lateral isolation of the devices to minimize parasitic inductance. imec has solved this by growing GaN on SOI wafers and using trench isolation.imec provides easy and affordable access to its state-of-the-art facilities, where you can produce Gan-IC’s prototypes up to small volume. Both academic and industrial customers can take advantage of our Multi-Project Wafer service (MPW) in order to share mask, processing and engineering costs. As such, customers can design their own GaN-IC’s using imec GaN technology.

Safeguarding silicon's successes
Panel Session

Is silicon's performance finally topping out? Or could there be another breakthrough?

Awaiting panel session abstract.

Cooling channel optimization in power inverter design

Presented by Fabio Alpiovezza, Hardware Engineering Manager, Marelli Electric Powertrain

The paper proposes a method to develop and optimize a proper cooling channel for a power module used in high-power three-phase inverters for electrified vehicles. Specifically, the cooling plate and the channel are designed by using steady-state 3D-computational-fluid-dynamic (CFD) tool. Subsequently, an optimization tool with dedicated algorithms is used to define the optimal layout, pin-fins and channel’s geometry in terms of inlet vs outlet pressure drop and power chip’s thermal performances. The simulations were performed using OptiSlang tool provided by Ansys.

Will silicon's dominance ever be threatened?

Presented by Callum Middleton, Senior Analyst, Omdia

Market data shows 2021 as the year that wide bandgap semiconductors really took off, with gallium nitride (GaN) power transistors being the fastest growing discrete power semiconductor component, and silicon carbide (SiC) power modules growing faster than all other varieties of power module. This talk will explore the market sectors and companies that are driving the growth of these exciting wide bandgap technologies, and whether they will ever be able to end the silicon’s dominance over the power electronics market.

Strengthening supply chains
Panel Session

Is vertical integration always the key to success?

Awaiting panel session abstract.

A new rhythm in Power Electronics ecosystems with emergence of SiC and GaN

Presented by Ezgi Dogmus, Team Lead Analyst, Yole Group

A new era has begun with arrival and emergence of wide band gap semiconductors SiC and GaN in high volume automotive and consumer electronic markets over the last decade. While mainstream Silicon markets continue to expand, SiC and GaN have brought superior performance and new application possibilities. Tremendous investments have been poured and the WBG industry doesn’t seem to slow down the pace. How does the industry adapt to these new technology platforms? Will there be enough wafers and devices for all? Yole will give its insights on supply chain strengthening in this presentation.

Clas-SiC: The UK’s only Commercial Power SiC Wafer Fab

Presented by David Clark, Technology and Customer Relations Manager, Clas-Sic

Awaiting presentation abstract.

UK supply chain for embedded GaN semiconductors in power electronics

Presented by Joe Petrie, Product Marketing Manager, PPM Power

The electrification of transport, such as rail, automotive and now also aerospace, is driving the need for smaller, lighter, more efficient power converters. Billed as “the new silicon”, Gallium Nitride (GaN) is a semiconductor which can withstand stronger electric fields, higher temperatures and support much faster switching speeds which in turn means a reduction in size and weight of power converters. However, legacy supply chains and packaging technologies are not designed to make the most of GaN. Supported by the UKRI’s Driving the electric revolution challenge, the P3EP project is a consortium of organisations which seeks to create a UK supply chain for embedding GaN and facilitate the design and manufacture of power converters up to 90% smaller and lighter than current silicon-based solutions.

Perfecting the package
Panel Session

Is high-performance, low-cost packaging possible?

Awaiting panel session abstract.

How advanced wafer technology and package experience impact SiC power devices

Presented by Peter Friedrichs, Vice President SiC, Infineon

There is an undoubted potential of SiC based power devices. The technology matured over the last 20 years with a strong focus on chip technology and related figures of merit. However, for the ultimate success cost drivers need to be addressed and the chip performance has to be connected to the circuit around by using an adequate package technology. The presentation will give some insides how e.g. the cold split technology can be implemented in order to reduce the substrate impact. Furthermore, it will be discussed how the Infineon housing competence can be successfully combined with the ultrafast and low loss SiC chip technologies.   

Packaging & Assembly Trends for Next Generation Power Modules

Presented by Huub Claassen, Business Development Manager, Boschman Advanced Packaging Technology

The global energy transition is driving much higher electrification levels, affecting the entire energy system from Generation to Transmission to Consumption. One of the critical building blocks for the “electric revolution” are power modules to make the entire electric eco-system more efficient, reliable, cost effective and smarter. Currently, automotive is pioneering these technologies with the advent of electric vehicles, but it is expected that these technologies will see quick and widespread adoption throughout other sectors in the energy system. For these high-power applications, the conventional semiconductor material – Silicon (Si) – is reaching its physical limits it terms of power density, switching frequency, operating temperature, and breakdown voltage. As a result, the industry is moving to next generation semiconductor materials, so called Wide-bandgap materials (WBG) to replace Silicon (Si) such as Silicon Carbide (SiC) and Gallium Nitride (GaN). While these materials offer breakthrough properties, they are not a drop-in replacement and essentially require all new designs, materials, and processes to deal with higher temperatures and offer better thermal resistance, performance and reliability. Specifically, for back-end semiconductor packaging: 1. Silver Sintering (to replace and overcome thermal limitations of tin solders) 2. Epoxy Molding (to replace and overcome thermal limitations of silicone gel) 3. Trimming and Forming of Power leads and signal pins Boschman has pioneered both processes with early adopters in the industry and has positioned itself as the market leader for both Pressure Sintering and Selective Molding. Due to our business model of offering both Development Services + Industrial Equipment, we are uniquely positioned to ‘connect the dots’ between new designs and high-volume manufacturing requirements.

Presentation by Vario-optics

Presented by Nikolaus Floery, Technical Business Development Manager, Vario-optics

Awaiting presentation abstract.

Theme to be confirmed

Presentation by Silvaco

Presented by Name to be advised, Silvaco

Awaiting presentation abstract.