Denis Marcon received a M.S. degree from the University of Padova in 2006. In 2011, he received the degree of Doctor in Engineering (Ph. D.) from the Catholic University of Leuven and Imec with a thesis entitled “Reliability study of power gallium nitride based transistors”. Denis is leading author or co-author of more than 50 journal papers or international conference contributions.
After his Ph.D. graduation, Denis has been leading projects aiming to develop GaN HEMTs for several applications (RF and power switching). Thereafter, he joined the business development team of Imec where he was directly responsible for the partnerships with Imec in the field of GaN power electronics as well as on dedicated development and manufacturing of Si-based devices, MEMS, sensors and micro-systems.
Denis is General Manager of Innoscience Europe (a subsidiary of Innoscience), and he is directly responsible for the Innoscience’s GaN business and marketing in Europe.
Gallium Nitride (GaN) power devices are the next-generation technology capable of outperforming standard Silicon (Si) power devices in both AC-DC and DC-DC applications. Thanks to their high frequency capabilities, they allow shrinking of the whole power system implementation, which is often combined with cost saving on the BOM (e.g. smaller passives, removal of heat sinks, etc..). In this presentation, Dr. Denis Marcon will show how to take advantage of discrete (InnoGaN™) or integrated (SolidGaN™) Innoscience GaN power devices (30V-700V) in enhancing the performance of AC-DC and DC-DC converters to maximize their efficiency whilst reducing their size and simplify their architecture. He will also show that it is now possible to provide price-competitive GaN power devices by leveraging the economies of scale, combining 8-inch GaN-on-Si wafers (about twice the number of devices per wafer than 6-inch processes) and high yield.