Denis Marcon received a M.S. degree from the University of Padova in 2006. In 2011, he received the degree of Doctor in Engineering (Ph. D.) from the Catholic University of Leuven and Imec with a thesis entitled “Reliability study of power gallium nitride based transistors”. Denis is leading author or co-author of more than 50 journal papers or international conference contributions.
After his Ph.D. graduation, Denis has been leading projects aiming to develop GaN HEMTs for several applications (RF and power switching). Thereafter, he joined the business development team of Imec where he was directly responsible for the partnerships with Imec in the field of GaN power electronics as well as on dedicated development and manufacturing of Si-based devices, MEMS, sensors and micro-systems.
Denis is General Manager of Innoscience Europe (a subsidiary of Innoscience), and he is directly responsible for the Innoscience’s GaN business and marketing in Europe and the United States.
One market that was difficult to penetrate for GaN power devices was the mobile phone market. We believe this was due to the restricted supply of cost-competitive GaN device and to the availability of a suitable GaN power device designed to provide clear benefit inside the mobile phone. In this presentation, we will show how Innoscience has addressed both of these issues. We will show that a truly integrated device manufacturer with high volume 8-inch internal manufacturing fully focused on GaN, is required to bring GaN power devices into mainstream high-volume end-products, including mobile phones. Second, we will introduce Innoscience’s bi-directional GaN power device (BiGaN) that is the first GaN device that can conduct current and block voltage in both directions. One (1) BiGaN replaces two (2) Si MOSFETs in the Over Voltage Protection (OVP) unit inside mobile phones thus reducing the system size by at least 50%, increase the overall efficiency and reduce the temperature rise by 40%.