Robert Harper received a BSc (Hons) in Chemistry from Swansea University and MSc (Distinction) in Advanced Semiconductor Processing and Device Technologies from Southampton University. He joined the process engineering team at Inmos in 1984 has 40 years of experience in semiconductor device manufacturing, process integration, materials research and business development. He worked at Inmos, ST Microelectronics, IQE and Lam Research before joining the Compound Semiconductor Centre (CSC). A venture that was supported by IQE and Cardiff University to create a unique global capability in emerging 21st century technologies based on Compound Semiconductor materials. CSC is a member of CS Connected, a regional cluster of industrial and academic partners focused on research, development, innovation and manufacturing of compound semiconductor related devices.
Robert is programme manager for Power and RF technologies and works with CSC’s industrial and academic research partners to shape and deliver their technology and product roadmaps.
The combination of wide bandgap and two dimensional electron gas (2DEG) gives gallium nitride a set of unique electronic properties that are very advantageous for Power, Sensing and RF applications. Recent progress in the manufacture of large diameter bulk GaN substrates provides a solution to many of the existing challenges related to hetero-epitaxy, these challenges result in wafer bow and crystallographic defects that compromise the quality of the epitaxial GaN layers and the devices built on them. We will review recent progress and emerging opportunities to extend the GaN applications space and discuss some of the remaining challenges needing further work.