Tushar Dhayagude
Vice President, Worldwide Sales & Field Applications
Transphorm
Tushar Dhayagude is Transphorm’s VP of Worldwide Sales. Previously, he was CEO of GV Semiconductor Inc. where he developed GaN-on-Silicon power HEMTs, controllers, and power systems. In 2006, he co-founded and worked as VP of Sales and Marketing for mSilica, a mixed-signal IC company developing LED drivers for LCD-TV and notebook backlighting. Other positions he’s held include Marketing Director of Atmel’s digital power and LED lighting segments; marketing management roles at National Semiconductor and Maxim; and semiconductor fab process and device integration engineering roles at National Semiconductor and IDT. Tushar holds 10 patents as well as an MBA & MEM from Northwestern University and MSEE from University of Arkansas.
Presentations
Topologies to Address Improvements in Consumer and Personal Electronics Power Supplies Using GaN-on-Silicon Power Devices
Personal battery-powered devices—from phones and laptops to power tools and electric bikes—using AC plugs for charging are expected to be small, sleek, and power efficient. GaN-on-Silicon power conversion technology can improve power storage size, charge times, and overall use without cumbersome power bricks by increasing efficiency, power density, supply reliability, and designability. This presentation will provide an overview of various end equipment requirements and topologies needed to achieve the GaN-enabled improvements. Specifically, the presentation will address AC-to-DC adapters for mobile phones, notebooks, LED lighting, in-wall chargers, and 2-wheeler chargers across power levels from 30 W to 750 W. System level considerations to achieve unprecedented GaN advantages will also be discussed along with technical comparisons of GaN FETs versus Silicon and Silicon Carbide MOSFETs.