Gallium Nitride is no longer a material of the future but is now very much of the present, today we see it successfully displacing silicon and other compound semiconductors across a wide range of power and wireless applications. Advances in GaN substrate manufacturing and the complex heteroepitaxial processes used to grow High Electron Mobility Transistor (HEMT) structures means that the number of automotive qualified GaN devices is increasing daily. Research effort into vertical GaN devices is also accelerating with the promise of significant breakdown and current density improvements that will enable GaN power devices to compete with SiC. I also intend to discuss new opportunities for GaN RF Power devices in 5G and rad-hard, ultra high sensitivity sensing.
Robert Harper received a BSc (Hons) in Chemistry from Swansea University and MSc (Distinction) in Advanced Semiconductor Processing and Device Technologies from Southampton University. He has >38 years relevant experience in semiconductor device manufacturing, process integration, materials research and business development roles from working at Inmos, ST Microelectronics, IQE and Lam Research before joining the Compound Semiconductor Centre (CSC). A joint venture between IQE plc and Cardiff University to support the creation of a unique global capability in emerging 21st century technologies based on Compound Semiconductor materials.Robert is programme manager for Power and RF technologies and works with CSC’s industrial and academic research partners to shape and deliver their technology and product roadmaps.