The EV revolution has already made great strides since its inception. To attain the next level of eminence, there is a need for greater power with better efficiency along with smaller sized power electronics systems that are lighter in weight and low in cost. Recent advancements in Silicon Carbide (SiC) MOSFET technologies have enabled higher power densities by significant reductions in switching and conduction losses and accelerated their adoption tremendously. A key point to note is the existence of significant differences amongst SiC MOSFET technologies offered by power device manufacturers. GeneSiC’s trench-assist planar gate SiC MOSFET technology enables low on-resistance at high temperatures and low switching losses at high speeds. This enables EVs to travel extra miles by improving the performance of traction inverters and on-board battery charging systems.
Sumit is a Staff Applications Engineer with GeneSiC Semiconductor (a wholly owned subsidiary of Navitas Semiconductor) and has been working with GeneSiC for the last 5 years on driving SiC power device (SiC FETs and SiC Diodes) applications in industrial and automotive mass-markets. His previous roles include product evaluation engineering and technical marketing engineering at ON Semi. He holds a Master of Science in Electrical Engineering from Arizona State University and specializes in electrical energy systems and power electronics.