Most current GaN-based power systems are multi-chip solutions: different components are assembled on a PCB. Not ideal, because maximum switching speeds don’t even come close to their potential values. The better solution is to combine these components on one complex GaN-IC. So how do you tackle that monolithic integration? The biggest challenge is the lateral isolation of the devices to minimize parasitic inductance. imec has solved this by growing GaN on SOI wafers and using trench isolation.imec provides easy and affordable access to its state-of-the-art facilities, where you can produce Gan-IC’s prototypes up to small volume. Both academic and industrial customers can take advantage of our Multi-Project Wafer service (MPW) in order to share mask, processing and engineering costs. As such, customers can design their own GaN-IC’s using imec GaN technology.
Maritza received her diploma degree in Physics Engineering from the National University of Colombia and her Master degree in Photonics from the Friedrich Schiller Universität – Jena, Germany. After that she worked as a researcher in different institutions from Colombia and Germany, and in many different topics ranging from optical design, holography and micro-optics to laser metrology. At imec, she joined first imec’s Silicon photonics multi-project wafer service and worked in different fronts of this project. In 2019 she stepped up and started the GaN-IC MPW service business which she is currently coordinating.