Most current GaN-based power systems are multi-chip solutions: different components are assembled on a PCB. Not ideal, because maximum switching speeds don’t even come close to their potential values. The better solution is to combine these components on one complex GaN-IC. So how do you tackle that monolithic integration? The biggest challenge is the lateral isolation of the devices to minimize parasitic inductance. imec has solved this by growing GaN on SOI wafers and using trench isolation.imec provides easy and affordable access to its state-of-the-art facilities, where you can produce Gan-IC’s prototypes up to small volume. Both academic and industrial customers can take advantage of our Multi-Project Wafer service (MPW) in order to share mask, processing and engineering costs. As such, customers can design their own GaN-IC’s using imec GaN technology.
Romano Hoofman received the M.Sc. degree in molecular sciences from Wageningen University in the Netherlands in 1995 and Ph.D. degree in radiation chemistry from the Technological University of Delft, The Netherlands in 2000. He started his career in industry where he worked as a Principal Scientist at Philips Research and later on NXP Semiconductors. He covered many different R&D topics, ranging from CMOS integration, photovoltaic technology, thin film batteries and (bio)sensors. In May 2016, he took on the position as Strategic Development Director at imec.IC-link, where is responsible for the program management of EUROPRACTICE and related innovation services.