PRESENTATION

Plasma Dicing of GaN on Si Wafers

Plasma dicing techniques developed by Panasonic for the singulation of Si wafers have been applied for many years and have become mainstream. Customers’ demands for expanded applications of plasma dicing to materials other than Si is increasing, so Panasonic further developed and presented improved plasma dicing techniques applied to GaAs wafers. Continuing this trend, Panasonic have now targeted the application of plasma dicing of GaN on Si wafers for the growing power device market. The applications and challenges of plasma dicing of GaN on Si wafers will be presented.

Atsushi Harikai

Panasonic Connect

Atsushi Harikai studied Plasma Physics at Kyushu University in Japan and graduated in 2003. He joined a device manufacturer as a process engineer and was engaged in the process integration and development of ICs for mobile phones. After that, he joined Panasonic Connect and embarked on research of plasma dicing and established total process solutions for the singulation of Si and compound semiconductors devices. Currently, he is the manager of product development for plasma dicing, dry etching and plasma cleaning equipment, and promotes the development of new technologies.